Time dependent Bs mixing from lepton-kaon correlations with the ALEPH detector

Searches for $B_s$ oscillations were made using data taken with the ALEPH detector in the years 1991--1994. Inclusive methods use leptons to tag the $B_s$ state at decay and to reconstruct the $B_s$ decay time. The $B_s$ state at production time is tagged either with a second lepton in the opposite hemisphere or a jet-charge algorithm. Also kaons from the fragmentation process were used to determine the initial state. Exclusive methods use $D_s$ or $D_s$-lepton events to reconstruct the $B_s$ at decay time. The initial state is inferred using leptons, jet charge or fragmentation kaons. No oscillations are observed and lower limits for the $B_s$ mass difference are obtained. A combined limit will be presented taking the correlations between the different analyses into account

Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges

We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 $\mathrm{\mu}$m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performed using radioactive sources in the laboratory.Comment: Proceedings for iWoRiD 2013 conference, submitted to JINS

Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of $10^{16}$ $\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ (1 MeV neutrons).Comment: 16 pages, 22 figure

Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.Comment: Proceedings for Pixel 2012 Conference, submitted to NIM A, 6 page

Energetics of positron states trapped at vacancies in solids

We report a computational first-principles study of positron trapping at vacancy defects in metals and semiconductors. The main emphasis is on the energetics of the trapping process including the interplay between the positron state and the defect's ionic structure and on the ensuing annihilation characteristics of the trapped state. For vacancies in covalent semiconductors the ion relaxation is a crucial part of the positron trapping process enabling the localization of the positron state. However, positron trapping does not strongly affect the characteristic features of the electronic structure, e.g., the ionization levels change only moderately. Also in the case of metal vacancies the positron-induced ion relaxation has a noticeable effect on the calculated positron lifetime and momentum distribution of annihilating electron-positron pairs.Comment: Submitted to Physical Review B on 17 April 2007. Revised version submitted on 6 July 200

Spacetime Encodings II - Pictures of Integrability

I visually explore the features of geodesic orbits in arbitrary stationary axisymmetric vacuum (SAV) spacetimes that are constructed from a complex Ernst potential. Some of the geometric features of integrable and chaotic orbits are highlighted. The geodesic problem for these SAV spacetimes is rewritten as a two degree of freedom problem and the connection between current ideas in dynamical systems and the study of two manifolds sought. The relationship between the Hamilton-Jacobi equations, canonical transformations, constants of motion and Killing tensors are commented on. Wherever possible I illustrate the concepts by means of examples from general relativity. This investigation is designed to build the readers' intuition about how integrability arises, and to summarize some of the known facts about two degree of freedom systems. Evidence is given, in the form of orbit-crossing structure, that geodesics in SAV spacetimes might admit, a fourth constant of motion that is quartic in momentum (by contrast with Kerr spacetime, where Carter's fourth constant is quadratic).Comment: 11 pages, 10 figure

Grover's Quantum Search Algorithm and Diophantine Approximation

In a fundamental paper [Phys. Rev. Lett. 78, 325 (1997)] Grover showed how a quantum computer can find a single marked object in a database of size N by using only O(N^{1/2}) queries of the oracle that identifies the object. His result was generalized to the case of finding one object in a subset of marked elements. We consider the following computational problem: A subset of marked elements is given whose number of elements is either M or K, M<K, our task is to determine which is the case. We show how to solve this problem with a high probability of success using only iterations of Grover's basic step (and no other algorithm). Let m be the required number of iterations; we prove that under certain restrictions on the sizes of M and K the estimation m < (2N^{1/2})/(K^{1/2}-M^{1/2}) obtains. This bound sharpens previous results and is known to be optimal up to a constant factor. Our method involves simultaneous Diophantine approximations, so that Grover's algorithm is conceptualized as an orbit of an ergodic automorphism of the torus. We comment on situations where the algorithm may be slow, and note the similarity between these cases and the problem of small divisors in classical mechanics.Comment: 8 pages, revtex, Title change

Effects of noise on hysteresis and resonance width in graphene and nanotubes resonators

We investigate the role that noise plays in the hysteretic dynamics of a suspended nanotube or a graphene sheet subject to an oscillating force. We find that not only the size but also the position of the hysteresis region in these systems can be controlled by noise. We also find that nano-resonators act as noise rectifiers: by increasing the noise in the setup, the resonance width of the characteristic peak in these systems is reduced and, as a result, the quality factor is increased.Comment: 15 pages, 6 figures. Sent to PRB (in revision